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40
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Course Description

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small plate ("chip") of semiconductor material, normally silicon. This can be made much smaller than a discrete circuit made from independent electronic components. ICs can be made very compact, having up to several billion transistors and other electronic components in an area the size of a fingernail. The width of each conducting line in a circuit can be made smaller and smaller as the technology advances; in 2008 it dropped below 100 nanometers,[1] and has now been reduced to tens of nanometers.[2]

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Course Syllabus
  • Lecture 1 - Introduction to Basic Concepts
  • Lecture 2-Requirements of High Speed Devices, Circuits & Mat
  • Lecture-3-Classifications & Properties of Compound Semicond
  • Lecture4-Temary Compound Semiconductor and their Application
  • Lecture5-Temary Compound Semiconductor and their Appl - 2
  • Lecture 6 - Crystal Structures in GaAs
  • Lecture 7 - Dopants and impurities in GaAs and InP
  • Lecture 8- Brief Overview of GaAs Technology for High Speed
  • Lecture 9 - Epitaxial Techniques for GaAs High Speed Devices
  • Lecture 10 - MBE and LPE for GaAs Epitaxy
  • Lecture 11 - GaAs and InP Devices for Microelectronics
  • Lecture 12 - Metal Semiconductor contacts for MESFET
  • Lecture13- Metal Semiconductor contacts for MESFET (Contd.)
  • Lecture14- Metal Semiconductor contacts for MESFET (Contd.)
  • Lecture 15 - Ohmic Contacts on Semiconductors
  • Lecture 16 - Fermi Level Pinning & Schottky Barrier Diodes
  • Lecture 17 - Schottky Barrier Diode
  • Lecture 18 - Schottky Barrier Diodes
  • Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes
  • Lecture 20 - MESFET Operation & I-V Characteristics
  • Lecture 21 - MESFET I-V Characteristics Shockley's Model
  • Lecture 22 - MESFET Shockley's Model and Velocity saturation
  • Lecture 23- MESFET Velocity Saturation effect
  • Lecture 24 -MESFET Drain Current Saturation
  • Lecture 25 - MESFET : Effects of channel length and gate length on IDS and gm
  • Lecture 26 - MESFET: Effects of Velocity Saturation
  • Lecture 27 - Velocity Field Characteristics
  • Lecture-28-MESFET-SAINT
  • Lecture-29-SELF Aligned MESFET-SAINT
  • Lecture-30-Hetero Junctions
  • Lecture-32-Hetero Junctions&HEMT(Contd)
  • Lecture-33-High Electron Mobility Transistor
  • Lecture-34-HEMT-off Voltage
  • Lecture-35-HEMT 1-V Characteristics and Transconductance
  • Lecture-36-Indium Phosphide Based HEMT
  • Lecture-37-Pseudomorphic HEMT
  • Lecture-38-Hetrojunction Bipolar Transistors(HBT)
  • Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd)
  • Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd)
  • Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd)
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